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| APT5010JLLU2 ISOTOP(R) Boost chopper MOSFET Power Module K VDSS = 500V RDSon = 100m max @ Tj = 25C ID = 41A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * ISOTOP(R) Package (SOT-227) * Very low stray inductance * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Very rugged * Low profile * RoHS Compliant D G S S G D K ISOTOP Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25C Tc = 80C mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-7 APT5010JLLU2 - Rev 1 Tc = 80C June, 2006 Tc = 25C Max ratings 500 41 30 164 30 100 378 41 50 1600 30 39 Unit V A V m W A APT5010JLLU2 Symbol IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25C Tj = 125C 3 VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = 20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 41A @ TJ=25C Resistive switching @ 25C VGS = 15V VBus = 250V ID = 41A @ TJ=25C R G = 0.6 Inductive Switching @ 25C Vbus = 330V, VGS =15V ID=46A, R G=5 Inductive Switching @ 125C Vbus = 330V, VGS =15V ID=46A, R G=5 Max 100 500 100 5 100 Max Unit A m V nA Unit pF Dynamic Characteristics Min Typ 4360 894 60 96 24 49 11 15 25 3 543 509 843 593 nC ns Eon Eoff Eon Eoff Symbol VF IRM CT trr J J Chopper diode ratings and characteristics Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/s IF = 30A VR = 400V di/dt =200A/s Min Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Typ 1.6 1.9 1.4 44 23 85 160 4 8 130 700 70 1300 30 Max 1.8 250 500 Unit V A pF ns A nC ns nC A June, 2006 2-7 APT5010JLLU2 - Rev 1 IF = 30A VR = 400V di/dt =1000A/s www.microsemi.com APT5010JLLU2 Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min MOSFET Diode 2500 -55 Typ Max 0.33 1.21 20 150 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 29.2 Typical MOSFET Performance Curve www.microsemi.com 3-7 APT5010JLLU2 - Rev 1 June, 2006 APT5010JLLU2 www.microsemi.com 4-7 APT5010JLLU2 - Rev 1 June, 2006 APT5010JLLU2 Typical Diode Performance Curve www.microsemi.com 5-7 APT5010JLLU2 - Rev 1 June, 2006 APT5010JLLU2 www.microsemi.com 6-7 APT5010JLLU2 - Rev 1 June, 2006 APT5010JLLU2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Cathode Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. Source Dimensions in Millimeters and (Inches) Gate June, 2006 ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APT5010JLLU2 - Rev 1 |
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